APTM10DUM05TG_10 Datasheet, PDF (1/6 Pages) Microsemi Corporation – Dual common source MOSFET Power Module

APTM10DUM05TG
Dual common source
MOSFET Power Module
V_DSS = 100V
R_DSon = 4.5mΩ typ @ Tj = 25°C
I_D = 278A @ Tc = 25°C
D1
Q1
D2
Q2
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
G1
S1
S
NT C1
Features
G2
• Power MOS V^® MOSFETs
- Low R_DSon
S2
- Low input and Miller capacitance
- Low gate charge
NT C2
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
G2
D2
S2
D1
D2
S
S1
S2
NTC2
G1
G2
NTC1
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
100
V
T_c = 25°C
278
T_c = 80°C
207
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
1100
±30
V
5
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
780
W
I_AR Avalanche current (repetitive and non repetitive)
100
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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