APTM10DHM09T3G Datasheet, PDF (1/7 Pages) Microsemi Corporation – Asymmetrical - Bridge MOSFET Power Module

APTM10DHM09T3G
Asymmetrical - Bridge
MOSFET Power Module
V_DSS = 100V
R_DSon = 9mΩ typ @ Tj = 25°C
I_D = 139A @ Tc = 25°C
13 14
Q1
18
CR3
22
7
19
23
8
Q4
CR2
4
29
30
15
31
R1
3
32
16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
• Power MOS V^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
100
V
T_c = 25°C
139
T_c = 80°C
100
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
430
±30
V
10
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
390
W
I_AR Avalanche current (repetitive and non repetitive)
100
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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