APTM10DHM05G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Asymmetrical - Bridge MOSFET Power Module

APTM10DHM05G
Asymmetrical - Bridge
MOSFET Power Module
V_DSS = 100V
R_DSon = 4.5mΩ typ @ Tj = 25°C
I_D = 278A @ Tc = 25°C
VBUS
Q1
CR3
G1
OUT2
S1
OUT1
Q4
CR2
-
G1
VBUS
S1
0/VB US
OUT1
0/VBUS
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS V^® MOSFETs
G4
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
S4
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
S4
G4
O UT 2
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
100
V
T_c = 25°C
278
T_c = 80°C
207
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
1100
±30
V
5
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
780
W
I_AR Avalanche current (repetitive and non repetitive)
100
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6