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APTM10DAM02G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Boost chopper MOSFET Power Module | |||
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APTM10DAM02G
Boost chopper
MOSFET Power Module
VDSS = 100V
RDSon = 2.25m⦠typ @ Tj = 25°C
ID = 495A @ Tc = 25°C
VBUS
CR1
OUT
Q2
G2
S2
0/VBUS
V BUS
0/VBUS
O UT
Application
⢠AC and DC motor control
⢠Switched Mode Power Supplies
⢠Power Factor Correction
Features
⢠Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
⢠High level of integration
Benefits
S2
G2
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Low profile
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
100
V
Tc = 25°C
495
Tc = 80°C
370
A
1900
±30
V
2.5
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
1250
W
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
100
A
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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