APTM100VDA35T3G Datasheet, PDF (1/7 Pages) Microsemi Corporation – Dual Boost chopper MOSFET Power Module

APTM100VDA35T3G
Dual Boost chopper
MOSFET Power Module
V_DSS = 1000V
R_DSon = 350mΩ typ @ Tj = 25°C
I_D = 22A @ Tc = 25°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction (PFC)
• Interleaved PFC
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Features
• Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single
boost of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
1000
V
T_c = 25°C
22
T_c = 80°C
17
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
88
±30
V
420
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
390
W
I_AR Avalanche current (repetitive and non repetitive)
25
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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