APTM100UM65SCAVG Datasheet, PDF (1/8 Pages) Microsemi Corporation – Single switch Series & SiC parallel diodes MOSFET Power Module

APTM100UM65SCAVG
Single switch
Series & SiC parallel diodes
MOSFET Power Module
V_DSS = 1000V
R_DSon = 65mΩ typ @ Tj = 25°C
I_D = 145A @ Tc = 25°C
D
DK
G
SK
S
G, SK and DK terminals are for control signals only
(not for power)
DK
S
D
SK
G
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• SiC Parallel Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Kelvin source for easy drive
• Kelvin drain for voltage monitoring
• Very low stray inductance
- Symmetrical design
- M5 power connectors
- M3 power connectors
• High level of integration
• AlN substrate for improved MOSFET thermal
performance
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
All ratings @ T_j = 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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