APTM100UM65DAG_08 Datasheet, PDF (1/6 Pages) Microsemi Corporation – Single switch with Series diode MOSFET Power Module

APTM100UM65DAG
Single switch
with Series diode
MOSFET Power Module
V_DSS = 1000V
R_DSon = 65mΩ typ @ Tj = 25°C
I_D = 145A @ Tc = 25°C
Application
• Zero Current Switching resonant mode
Features
• Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
Benefits
S
D
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
SK
• Low junction to case thermal resistance
G
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
1000
V
T_c = 25°C
145
T_c = 80°C
110
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
580
±30
V
78
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
3250
W
I_AR Avalanche current (repetitive and non repetitive)
30
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
3200
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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