APTM100TA35FPG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Triple phase leg MOSFET Power Module

APTM100TA35FPG
Triple phase leg
MOSFET Power Module
V_DSS = 1000V
R_DSon = 350mΩ typ @ Tj = 25°C
I_D = 22A @ Tc = 25°C
VBUS1
G1
S1
G2
S2
0/ VBUS1
VBUS2
G3
S3
U
G4
S4
0/ VBUS2
VBUS3
G5
S5
V
G6
S6
0/VBUS3
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
W
Features
• Power MOS 7^® FREDFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
VBUS 1
G1
VBUS 2
G3
VBUS 3
G5
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
0/VBUS 1
S1
0/VBUS 2
S3
0/VBUS 3
S5
easy PCB mounting
S2
S4
S6
G2
G4
G6
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase
U
V
W
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
full bridge
Absolute maximum ratings
• RoHS Compliant
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
1000
V
T_c = 25°C
22
T_c = 80°C
17
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
88
±30
V
420
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
390
W
I_AR Avalanche current (repetitive and non repetitive)
25
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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