APTM100H80FT1G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Full - Bridge MOSFET Power Module

APTM100H80FT1G
Full - Bridge
MOSFET Power Module
V_DSS = 1000V
R_DSon = 800mΩ typ @ Tj = 25°C
I_D = 11A @ Tc = 25°C
3
4
Q1
Q3
5
2
61
Q2
Q4
7
9
8
10
11
NTC
12
Pins 3/4 must be shorted together
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 8™ Fast FREDFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
1000
V
T_c = 25°C
11
T_c = 80°C
8
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
68
±30
V
960
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
208
W
I_AR Avalanche current (repetitive and non repetitive)
9
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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