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APTM100H46FT3G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Full bridge MOSFET Power Module | |||
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APTM100H46FT3G
Full bridge
MOSFET Power Module
VDSS = 1000V
RDSon = 460mΩ typ @ Tj = 25°C
ID = 19A @ Tc = 25°C
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor control
Features
28 27 26 25 23 22 20 19 18
⢠Power MOS 8⢠Fast FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
⢠Very low stray inductance
- Symmetrical design
⢠Kelvin source for easy drive
⢠Internal thermistor for temperature monitoring
⢠High level of integration
29
16
30
15
Benefits
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 â¦
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
⢠Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
1000
V
Tc = 25°C
19
Tc = 80°C
14
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
120
±30
V
552
mΩ
PD Maximum Power Dissipation
Tc = 25°C
357
W
IAR Avalanche current (repetitive and non repetitive)
16
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1â5
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