APTM100H45STG Datasheet, PDF (1/7 Pages) Microsemi Corporation – Full bridge Series & parallel diodes MOSFET Power Module

APTM100H45STG
Full bridge
Series & parallel diodes
MOSFET Power Module
V_DSS = 1000V
R_DSon = 450mΩ typ @ Tj = 25°C
I_D = 18A @ Tc = 25°C
VBUS
CR 1A
CR3A
CR1B CR3B
Q1
Q3
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
G1
S1
O UT1 OUT2
G3
S3
• Power MOS 7^® MOSFETs
CR 2A
CR 4A
- Low R_DSon
- Low input and Miller capacitance
Q2
CR2B CR4B
Q4
- Low gate charge
G2
S2
NTC1
0/ VBU S
G4
S4
N T C2
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
G3
S3
VB US
S1
G1
G4
S4
0/VBUS
S2
G2
OUT2
OUT1
NTC2
NTC1
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
I_DM
V_GS
R_DSon
P_D
I_AR
E_AR
E_AS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T_c = 25°C
T_c = 80°C
T_c = 25°C
Max ratings Unit
1000
V
18
14
A
72
±30
V
540
mΩ
357
W
18
A
50
mJ
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7