APTM100H45SCTG Datasheet, PDF (1/8 Pages) Microsemi Corporation – Full bridge Series & SiC parallel diodes MOSFET Power Module

APTM100H45SCTG
Full bridge
Series & SiC parallel diodes
MOSFET Power Module
V_DSS = 1000V
R_DSon = 450mΩ typ @ Tj = 25°C
I_D = 18A @ Tc = 25°C
Application
• Motor control
VBUS
• Switched Mode Power Supplies
CR1A
CR3A
• Uninterruptible Power Supplies
Q1
CR1B CR3B
Q3
Features
• Power MOS 7^® MOSFETs
- Low R_DSon
G1
G3
- Low input and Miller capacitance
S1
OUT1 OUT2
S3
- Low gate charge
CR2A
CR4A
- Avalanche energy rated
G2
S2
NTC1
Q2
CR2B CR4B
Q4
0/VBUS
G4
S4
NTC2
• Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
G3
S3
VB US
S1
G1
G4
S4
0/VBUS
S2
G2
OUT2
OUT1
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Max ratings Unit
V_DSS
I_D
I_DM
V_GS
R_DSon
P_D
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
1000
V
T_c = 25°C
18
T_c = 80°C
14
A
72
±30
V
540
mΩ
T_c = 25°C
357
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
18
A
50
mJ
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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