APTM100H45FT3G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Full - Bridge MOSFET Power Module

APTM100H45FT3G
Full - Bridge
MOSFET Power Module
V_DSS = 1000V
R_DSon = 450mΩ typ @ Tj = 25°C
I_D = 18A @ Tc = 25°C
13 14
Q1
Q3
18
22 7
19
23 8
Q2
11
10
Q4
26
4
27
3
29 30
31
32
15
16
R1
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
2 34
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS 7^® FREDFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
I_DM
V_GS
R_DSon
P_D
I_AR
E_AR
E_AS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T_c = 25°C
T_c = 80°C
T_c = 25°C
Max ratings Unit
1000
V
18
14
A
72
±30
V
540
mΩ
357
W
18
A
50
mJ
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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