APTM100DU18TG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Dual Common Source MOSFET Power Module

APTM100DU18TG
Dual Common Source
MOSFET Power Module
V_DSS = 1000V
R_DSon = 180mΩ typ @ Tj = 25°C
I_D = 43A @ Tc = 25°C
D1
Q1
D2
Q2
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
G1
S1
S
NT C1
G2
Features
• Power MOS 7^® MOSFETs
S2
- Low R_DSon
- Low input and Miller capacitance
NT C2
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
G2
D2
S2
D1
S
D2
S1
S2
NTC2
G1
G2
NTC1
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
1000
V
T_c = 25°C
43
T_c = 80°C
33
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
172
±30
V
210
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
780
W
I_AR Avalanche current (repetitive and non repetitive)
25
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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