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APTM100DAM90G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Boost chopper MOSFET Power Module
APTM100DAM90G
Boost chopper
MOSFET Power Module
VDSS = 1000V
RDSon = 90mΩ typ @ Tj = 25°C
ID = 78A @ Tc = 25°C
CR1
VBUS
OUT
Q2
G2
S2
0/VBUS
V BUS
S2
G2
0/VBUS
O UT
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
1000
V
Tc = 25°C
78
Tc = 80°C
59
A
312
±30
V
105
mΩ
PD Maximum Power Dissipation
Tc = 25°C
1250
W
IAR Avalanche current (repetitive and non repetitive)
25
A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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