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APTM100DA18CT1G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Boost chopper MOSFET + SiC chopper diode Power Module | |||
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APTM100DA18CT1G
Boost chopper
MOSFET + SiC chopper diode
Power Module
56
11
CR1
3 NTC
Q2
4
9
10
12
12
VDSS = 1000V
RDSon = 180mΩ typ @ Tj = 25°C
ID = 40A @ Tc = 25°C
Application
⢠AC and DC motor control
⢠Switched Mode Power Supplies
⢠Power Factor Correction
Features
⢠Power MOS 8⢠MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
⢠SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
⢠Very low stray inductance
⢠Internal thermistor for temperature monitoring
⢠High level of integration
Benefits
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
⢠RoHS Compliant
Max ratings
Unit
1000
V
Tc = 25°C
40
Tc = 80°C
30
A
260
±30
V
216
mΩ
Tc = 25°C
657
W
33
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1â5
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