APTM100A23STG Datasheet, PDF (1/7 Pages) Microsemi Corporation – Phase leg Series & parallel diodes MOSFET Power Module

APTM100A23STG
Phase leg
Series & parallel diodes
MOSFET Power Module
V_DSS = 1000V
R_DSon = 230mΩ typ @ Tj = 25°C
I_D = 36A @ Tc = 25°C
Q1
G1
S1
Q2
G2
S2
V BUS
NT C 2
OUT
0/VBUS
NT C 1
VBUS
S1
G1
0/ VB US
S2
G2
OUT
OUT
NTC2
NTC1
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
I_DM
V_GS
R_DSon
P_D
I_AR
E_AR
E_AS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Max ratings Unit
1000
V
T_c = 25°C
36
T_c = 80°C
27
A
144
±30
V
270
mΩ
T_c = 25°C
694
W
18
A
50
mJ
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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