APTM100A23SCTG Datasheet, PDF (1/7 Pages) Microsemi Corporation – Phase leg Series & SiC parallel diodes MOSFET Power Module

APTM100A23SCTG
Phase leg
Series & SiC parallel diodes
MOSFET Power Module
V_DSS = 1000V
R_DSon = 230mΩ typ @ Tj = 25°C
I_D = 36A @ Tc = 25°C
VBUS
NT C2
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Q1
G1
S1
OUT
Features
• Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
Q2
G2
S2
0 /V BU S
NT C1
• Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
VBUS
S1
G1
0/VBUS
S2
G2
OUT
OUT
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Max ratings Unit
V_DSS
I_D
I_DM
V_GS
R_DSon
P_D
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
1000
V
T_c = 25°C
36
T_c = 80°C
27
A
144
±30
V
270
mΩ
T_c = 25°C
694
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
18
A
50
mJ
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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