APTM100A13DG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Phase leg with Series diodes MOSFET Power Module

APTM100A13DG
Phase leg
with Series diodes
MOSFET Power Module
V_DSS = 1000V
R_DSon = 130mΩ typ @ Tj = 25°C
I_D = 65A @ Tc = 25°C
VBUS
G1
S1
OUT
G2
0/VBUS
S2
G1
VBUS
S1
S2
G2
0/VBUS
OUT
Application
• Zero Current Switching resonant mode
Features
• Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
1000
V
T_c = 25°C
65
T_c = 80°C
49
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
240
±30
V
156
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
1250
W
I_AR Avalanche current (repetitive and non repetitive)
24
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
30
mJ
1300
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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