APTGV50H60T3G Datasheet, PDF (1/9 Pages) Microsemi Corporation – Full - Bridge NPT & Trench + Field Stop® IGBT Power module

APTGV50H60T3G
Full - Bridge
NPT & Trench + Field Stop^® IGBT
Power module
Trench & Field Stop^® IGBT Q1, Q3:
V_CES = 600V ; I_C = 50A @ Tc = 80°C
Fast NPT IGBT Q2, Q4:
V_CES = 600V ; I_C = 50A @ Tc = 80°C
13 14
Q1
Q3
18
CR1 CR3
11
19
10
22 7
23 8
Q2
Q4
CR2 CR4
26
4
27
3
29
30
15
31
32
16
R1
Top switches : Trench + Field Stop IGBT^®
Bottom switches : FAST NPT IGBT
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
13/14 ; 15/16 ; 26/27 ; 31/32
Application
• Solar converter
Features
• Q2, Q4 FAST Non Punch Through (NPT) IGBT
- Switching frequency up to 100 kHz
- RBSOA & SCSOA rated
- Low tail current
• Q1, Q3 Trench & Field Stop IGBT^®
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
- Low tail current
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Optimized conduction & switching losses
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive T_C of V_CEsat
• RoHS Compliant
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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