APTGV50H60BG Datasheet, PDF (1/15 Pages) Microsemi Corporation – Boost chopper CoolMos™ + full bridge NPT & Trench + Field Stop IGBT Power module

APTGV50H60BG
Boost chopper CoolMos™
+ full bridge
NPT & Trench + Field Stop IGBT
Power module
KK
CR5
Q1
G1
VBUS1
VBUS2
CR1
CR3
Q3
G3
Q
5
G5
SK5
D5
D5
Q2
G2
E2
OUT1A
OUT1B
OUT2A
OUT2B
CR2
CR4
Q4
G4
E4
S5 S5
0/VBUS
Full bridge top switches : Trench + Field Stop IGBT
Full bridge bottom switches : FAST NPT IGBT
Q5 boost chopper : CoolMOS™
Trench & Field Stop IGBT Q1, Q3:
V_CES = 600V , I_C = 50A @ Tc = 80°C
Fast NPT IGBT Q2, Q4:
V_CES = 600V ; I_C = 50A @ Tc = 80°C
CoolMOS™ Q5:
V_CES = 600V ; I_C = 49A @ Tc = 25°C
Application
• Solar converter
Features
• Q2, Q4 (FAST Non Punch Through (NPT) IGBT)
- Switching frequency up to 100 kHz
- RBSOA & SCSOA rated
- Low tail current
• Q1, Q3 (Trench & Field Stop IGBT)
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
- Low tail current
Q5 (CoolMOS™)
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
K
K
G1
OUT 1B
OUT 1A
D5
D5
VBUS 1
VBUS 2
G3
OUT 2B
OUT 2A
G5
G2
S5
S5
SK5
G4
E2 0/VBUS
E4
All multiple inputs and outputs must be shorted together
OUT1A/OUT1B ; VBUS1/VBUS2 ; K/K ; …
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
Benefits
• Optimized conduction & switching losses
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive T_C of V_CEsat
• RoHS Compliant
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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