APTGV50H120BTPG Datasheet, PDF (1/13 Pages) Microsemi Corporation – Boost chopper + full bridge NPT & Trench + Field Stop IGBT Power module

APTGV50H120BTPG
Boost chopper + full bridge
NPT & Trench + Field Stop IGBT
Power module
K
VBUS1
VBUS2
CR5
Q1
G1
CR1
Q3
G3
CR3
Q5
G5
E5
E1
C
Q2
CR5B ^G2
E2
E3
OUT1
Q4
CR2
G4
E4
OUT2
CR4
E
0/VBUS1
0/VBUS2
NTC1
NTC
NTC2
Full bridge top switches : Trench + Field Stop IGBT
Full bridge bottom switches : FAST NPT IGBT
Q5 boost chopper : FAST NPT IGBT
K
VBUS 1
VBUS 2
G5
G1
G3
E5
0/VBUS 1
E1
0/VBUS 2
E3
C
E2
E4
G2
G4
E
OUT 1
OUT2
Trench & Field Stop IGBT Q1, Q3:
V_CES = 1200V ; I_C = 50A @ Tc = 80°C
Fast NPT IGBT Q2, Q4:
V_CES = 1200V ; I_C = 50A @ Tc = 80°C
Fast NPT IGBT Q5:
V_CES = 1200V ; I_C = 100A @ Tc = 80°C
Application
• Solar converter
Features
• Q2, Q4, Q5 (FAST Non Punch Through (NPT) IGBT)
- Switching frequency up to 100 kHz
- RBSOA & SCSOA rated
- Low tail current
• Q1, Q3 (Trench & Field Stop IGBT)
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
- Low tail current
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Optimized conduction & switching losses
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive T_C of V_CEsat
• RoHS Compliant
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1 - 13