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APTGT600DU60G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Dual common source Trench + Field Stop IGBT Power Module | |||
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APTGT600DU60G
Dual common source
Trench + Field Stop IGBT®
Power Module
VCES = 600V
IC = 600A* @ Tc = 80°C
C1 C2
Q1
Q2
Application
⢠AC Switches
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
G1
G2
Features
⢠Trench + Field Stop IGBT® Technology
E1
E2
- Low voltage drop
- Low tail current
E
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
G1
C1
E
C2
E1
E2
G2
⢠Kelvin emitter for easy drive
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
⢠High level of integration
Benefits
⢠Stable temperature behavior
⢠Very rugged
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Easy paralleling due to positive TC of VCEsat
⢠Low profile
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VCES Collector - Emitter Breakdown Voltage
600
V
IC Continuous Collector Current
TC = 25°C
700 *
TC = 80°C
600 *
A
ICM Pulsed Collector Current
TC = 25°C
800
VGE Gate â Emitter Voltage
±20
V
PD Maximum Power Dissipation
TC = 25°C
2300
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C 1200A @ 550V
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater
than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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