APTGT50TDU170PG Datasheet, PDF (1/5 Pages) Microsemi Corporation – Triple Dual Common Source Trench + Field Stop IGBT Power Module

APTGT50TDU170PG
Triple Dual Common Source
Trench + Field Stop IGBT^®
Power Module
C1
C3
C5
G1
G3
G5
E1
E3
E1/E2
E2
E4
E5
E3/E4
E6
E5/E6
G2
C2
G4
C4
G6
C6
C1
C3
C5
G1
G3
G5
E1/E2
E1
E3 /E4
E3
E5 /E 6
E5
E2
E4
E6
G2
G4
G6
C2
C4
C6
Absolute maximum ratings
Symbol
Parameter
V_CES Collector - Emitter Breakdown Voltage
I_C Continuous Collector Current
I_CM
V_GE
P_D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
V_CES = 1700V
I_C = 50A @ Tc = 80°C
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Trench + Field Stop IGBT^® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Kelvin emitter for easy drive
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
• RoHS Compliant
Max ratings
Unit
1700
V
T_C = 25°C
70
T_C = 80°C
50
A
T_C = 25°C
100
±20
V
T_C = 25°C
310
W
T_j = 125°C 100A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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