APTGT150TL60G Datasheet, PDF (1/7 Pages) Microsemi Corporation – Three level inverter Trench + Field Stop IGBT Power Module

APTGT150TL60G
Three level inverter
Trench + Field Stop IGBT
Power Module
VBUS
G1
Q1
E1
CR1
CR5
G2
Q2
NEUTRAL
E2
G3
CR6
Q3
E3
CR2
OUT
CR3
G4
Q4
E4
CR4
0/VBUS
VBUS
0/VBUS
G1
G4
E1
E4
NEUTRAL
E2
E3
G2
G3
OUT
V_CES = 600V
I_C = 150A @ Tc = 80°C
Application
• Solar converter
• Uninterruptible Power Supplies
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
600
V
I_C Continuous Collector Current
T_C = 25°C
200
T_C = 80°C
150
A
I_CM Pulsed Collector Current
T_C = 25°C
300
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_C = 25°C
480
W
RBSOA Reverse Bias Safe Operating Area
T_j = 150°C 300A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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