APTGT150H170G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Full - Bridge Trench + Field Stop IGBT Power Module

APTGT150H170G
Full - Bridge
Trench + Field Stop IGBT^®
Power Module
V_CES = 1700V
I_C = 150A @ Tc = 80°C
Q1
G1
Application
VBUS
• Welding converters
Q3
G3
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
E1
OUT1 OUT2
E3
Features
• Trench + Field Stop IGBT^® Technology
Q2
G2
Q4
G4
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
E2
E4
- Low diode VF
- Low leakage current
0/VBUS
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
OUT1
• High level of integration
G1
VBUS
E1
0/VBUS
G2
E2
Benefits
• Stable temperature behavior
E3
E4
• Very rugged
G3
G4
• Direct mounting to heatsink (isolated package)
OUT2
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
1700
V
I_C Continuous Collector Current
T_C = 25°C
250
T_C = 80°C
150
A
I_CM Pulsed Collector Current
T_C = 25°C
300
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_C = 25°C
890
W
RBSOA Reverse Bias Safe Operating Area
T_j = 125°C 300A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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