APTGT150DH60TG Datasheet, PDF (1/5 Pages) Microsemi Corporation – Asymmetrical - Bridge Trench + Field Stop IGBT Power Module

APTGT150DH60TG
Asymmetrical - Bridge
Trench + Field Stop IGBT^®
Power Module
V_CES = 600V
I_C = 150A @ Tc = 80°C
Q1
G1
VBUS
VBUS SENSE
CR3
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
E1
OUT1 O UT2
Q4
CR2
0/VBUS SENSE
NTC1
0/V BU S
G4
E4
NT C2
Features
• Trench + Field Stop IGBT^® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
VBUS
SENSE
VBUS
E1
G1
G4
E4
0/ VBUS
0/ VBUS
SENSE
OUT2
OUT1
NTC2
NTC1
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
600
V
I_C Continuous Collector Current
T_C = 25°C
225
T_C = 80°C
150
A
I_CM Pulsed Collector Current
T_C = 25°C
350
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_C = 25°C
480
W
RBSOA Reverse Bias Safe Operating Area
T_j = 150°C 300A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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