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APTGT150DH120G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module | |||
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APTGT150DH120G
Asymmetrical - Bridge
Fast Trench + Field Stop IGBT®
Power Module
VCES = 1200V
IC = 150A @ Tc = 80°C
Q1
G1
VBUS
CR3
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Switched Reluctance Motor Drives
E1
OUT1 OUT2
Features
⢠Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
Q4
- Low tail current
G4
- Switching frequency up to 20 kHz
CR2
- Soft recovery parallel diodes
E4
- Low diode VF
- Low leakage current
0/VBUS
- Avalanche energy rated
- RBSOA and SCSOA rated
⢠Kelvin emitter for easy drive
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
OUT 1
⢠High level of integration
G1
VBUS
0/VBUS
E1
Benefits
⢠Stable temperature behavior
E4
⢠Very rugged
G4
⢠Direct mounting to heatsink (isolated package)
OUT2
⢠Low junction to case thermal resistance
⢠Easy paralleling due to positive TC of VCEsat
⢠Low profile
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VCES Collector - Emitter Breakdown Voltage
1200
V
IC Continuous Collector Current
TC = 25°C
220
TC = 80°C
150
A
ICM Pulsed Collector Current
TC = 25°C
350
VGE Gate â Emitter Voltage
±20
V
PD Maximum Power Dissipation
TC = 25°C
690
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 300A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
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