APTGT150DA120TG Datasheet, PDF (1/5 Pages) Microsemi Corporation – Boost chopper Fast Trench + Field Stop IGBT® Power Module

APTGT150DA120TG
Boost chopper
Fast Trench + Field Stop IGBT^®
Power Module
VB US SENS E
VBUS
NT C2
CR1
Q2
G2
E2
0/VBU S
OUT
NT C1
VBUS
VBUS
SENSE
G2
E2
0/VBUS
E2
G2
OUT
OUT
NTC2
NTC1
V_CES = 1200V
I_C = 150A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Fast Trench + Field Stop IGBT^® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
1200
V
I_C Continuous Collector Current
T_C = 25°C
220
T_C = 80°C
150
A
I_CM Pulsed Collector Current
T_C = 25°C
350
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_C = 25°C
690
W
RBSOA Reverse Bias Safe Operating Area
T_j = 125°C 300A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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