APTGT100TL60T3G Datasheet, PDF (1/7 Pages) Microsemi Corporation – Three level inverter Trench + Field Stop IGBT Power Module

APTGT100TL60T3G
Three level inverter
Trench + Field Stop IGBT
Power Module
V_CES = 600V
I_C = 100A @ Tc = 80°C
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
Application
• Solar converter
• Uninterruptible Power Supplies
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
V_CES Collector - Emitter Breakdown Voltage
I_C Continuous Collector Current
I_CM
V_GE
P_D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Max ratings
Unit
600
V
T_C = 25°C
150
T_C = 80°C
100
A
T_C = 25°C
200
±20
V
T_C = 25°C
340
W
T_j = 150°C 200A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
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