APTGT100H60T3G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Full - Bridge Trench + Field Stop IGBT Power Module

APTGT100H60T3G
Full - Bridge
Trench + Field Stop IGBT^®
Power Module
V_CES = 600V
I_C = 100A* @ Tc = 80°C
13 14
Q1
Q3
18
CR1 CR3
11
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
19
10
22 7
23 8
Q2
Q4
CR2 CR4
26
4
27
3
29
30
15
31
32
16
R1
28 27 26 25 23 22 20 19 18
Features
• Trench + Field Stop IGBT^® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
• High level of integration
• Internal thermistor for temperature monitoring
29
16
30
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
600
V
I_C Continuous Collector Current
T_C = 25°C
150 *
T_C = 80°C
100 *
A
I_CM Pulsed Collector Current
T_C = 25°C
200
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_C = 25°C
340
W
RBSOA Reverse Bias Safe Operating Area
T_j = 150°C 200A @ 550V
* Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater
than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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