APTGT100H170G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Full - Bridge Trench + Field Stop IGBT Power Module

APTGT100H170G
Full - Bridge
Trench + Field Stop IGBT^®
Power Module
V_CES = 1700V
I_C = 100A @ Tc = 80°C
Q1
G1
VBUS
Q3
E1
OUT1 OUT2
Q2
Q4
G2
E2
0/VBUS
G1
VBUS
E1
E3
G3
OUT1
0/VBUS
OUT2
Application
• Welding converters
• Switched Mode Power Supplies
G3
• Uninterruptible Power Supplies
• Motor control
E3
Features
• Trench + Field Stop IGBT^® Technology
- Low voltage drop
- Low tail current
G4
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
E4
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
G2
E2
Benefits
• Stable temperature behavior
E4
• Very rugged
G4
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
1700
V
I_C Continuous Collector Current
T_C = 25°C
150
T_C = 80°C
100
A
I_CM Pulsed Collector Current
T_C = 25°C
200
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_C = 25°C
560
W
RBSOA Reverse Bias Safe Operating Area
T_j = 125°C 200A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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