APTGT100DDA60T3G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Dual Boost chopper Trench + Field Stop IGBT Power Module

APTGT100DDA60T3G
Dual Boost chopper
Trench + Field Stop IGBT^®
Power Module
V_CES = 600V
I_C = 100A* @ Tc = 80°C
13 14
CR1
CR2
22 7
23 8
Q1
Q2
26
4
27
3
29
30
15
31
32
16
R1
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Trench + Field Stop IGBT^® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
• High level of integration
• Internal thermistor for temperature monitoring
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• Each leg can be easily paralleled to achieve a
single boost of twice the current capability.
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
600
V
I_C Continuous Collector Current
T_C = 25°C
150 *
T_C = 80°C
100 *
A
I_CM Pulsed Collector Current
T_C = 25°C
200
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_C = 25°C
340
W
RBSOA Reverse Bias Safe Operating Area
T_j = 150°C 200A @ 550V
* Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater
than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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