APTGT100DA120T1G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Boost chopper Fast Trench + Field Stop IGBT® Power Module

APTGT100DA120T1G
Boost chopper
Fast Trench + Field Stop IGBT^®
Power Module
V_CES = 1200V
I_C = 100A* @ Tc = 80°C
56
11
CR1
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
3
4
NTC
Q2
CR2
9
10
12
12
Features
• Fast Trench + Field Stop IGBT^® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
V_CES Collector - Emitter Breakdown Voltage
I_C Continuous Collector Current
I_CM
V_GE
P_D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Max ratings
Unit
T_C = 25°C
T_C = 80°C
T_C = 25°C
T_C = 25°C
1200
V
140 *
100 *
A
200
±20
V
480
W
T_j = 125°C 200A @ 1100V
Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater
than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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