APTGL60TL120T3G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Three level inverter Trench + Field Stop IGBT4

APTGL60TL120T3G
Three level inverter
Trench + Field Stop IGBT4
V_CES = 1200V
I_C = 60A @ Tc = 80°C
28 27 26 25
29
30
23 22
20 19 18
16
15
Application
• Solar converter
• Uninterruptible Power Supplies
Features
• Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
V_CES Collector - Emitter Breakdown Voltage
I_C Continuous Collector Current
I_CM
V_GE
P_D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Max ratings
Unit
1200
V
T_C = 25°C
80
T_C = 80°C
60
A
T_C = 25°C
100
±20
V
T_C = 25°C
280
W
T_j = 150°C 100A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
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