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APTGL60H120T3G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Full bridge Trench + Field Stop IGBT4 Power module | |||
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APTGL60H120T3G
Full bridge
Trench + Field Stop IGBT4
Power module
VCES = 1200V
IC = 60A @ Tc = 80°C
13 14
Q1
Q3
18
CR1 CR3
11
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor control
19
10
22 7
23 8
Q2
Q4
CR2 CR4
26
4
27
3
29
30
15
31
32
16
R1
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 â¦
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate â Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Features
⢠Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
- Symmetrical design
⢠Kelvin emitter for easy drive
⢠Very low stray inductance
⢠High level of integration
⢠Internal thermistor for temperature monitoring
Benefits
⢠Outstanding performance at high frequency
operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
⢠Easy paralleling due to positive TC of VCEsat
⢠Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
⢠RoHS compliant
Max ratings
Unit
1200
V
TC = 25°C
80
TC = 80°C
60
A
TC = 25°C
100
±20
V
TC = 25°C
280
W
Tj = 150°C 100A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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