APTGL60DDA120T3G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Dual Boost chopper Trench + Field Stop IGBT4 Power module

APTGL60DDA120T3G
Dual Boost chopper
Trench + Field Stop IGBT4
Power module
V_CES = 1200V
I_C = 60A @ Tc = 80°C
13 14
CR1
CR2
22 7
23 8
Q1
Q2
26
4
27
3
29
30
15
31
32
16
R1
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
V_CES Collector - Emitter Breakdown Voltage
I_C Continuous Collector Current
I_CM
V_GE
P_D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a
single boost of twice the current capability
• RoHS compliant
Max ratings
Unit
1200
V
T_C = 25°C
80
T_C = 80°C
60
A
T_C = 25°C
100
±20
V
T_C = 25°C
280
W
T_j = 150°C 100A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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