APTGL475U120DAG Datasheet, PDF (1/5 Pages) Microsemi Corporation – Single switch with Series diode Trench + Field Stop IGBT4

APTGL475U120DAG
Single switch
with Series diode
Trench + Field Stop IGBT4
V_CES = 1200V
I_C = 475A @ Tc = 100°C
EK
E
G
CK
EK
G
Application
C
• Zero Current Switching resonant mode
Features
• Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
CK
- Low switching losses
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
E
C
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V_CES Collector - Emitter Breakdown Voltage
1200
V
I_C Continuous Collector Current
T_c = 25°C
610
T_c = 100°C
475
A
I_CM Pulsed Collector Current
T_c = 25°C
800
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_c = 25°C
2307
W
RBSOA Reverse Bias Safe Operating Area
T_j = 150°C 800A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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