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APTGL325DA120D3G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Boost chopper Trench + Field Stop IGBT4 Power Module
APTGL325DA120D3G
Boost chopper
Trench + Field Stop IGBT4
Power Module
3
Q2
1
6
7
2
VCES = 1200V
IC = 325A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- Soft recovery parallel diodes
- Low diode VF
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M6 power connectors
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VCES Collector - Emitter Breakdown Voltage
1200
V
IC Continuous Collector Current
TC = 25°C
420
TC = 80°C
325
A
ICM Pulsed Collector Current
TC = 25°C
600
VGE Gate – Emitter Voltage
±20
V
PD Maximum Power Dissipation
TC = 25°C
1500
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 600A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
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