APTGL180A120T3AG Datasheet, PDF (1/5 Pages) Microsemi Corporation – Phase leg Trench + Field Stop IGBT4 Power Module

APTGL180A120T3AG
Phase leg
Trench + Field Stop IGBT4
Power Module
V_CES = 1200V
I_C = 180A @ Tc = 100°C
29 30 31 32
13
4
3
26 27 28
R1
22 23 25
8
7
16 18 19 20
14
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- Soft recovery parallel diodes
- Low diode VF
- RBSOA and SCSOA rated
• Very low stray inductance
• Kelvin emitter for easy drive
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Easy paralleling due to positive T_C of V_CEsat
• RoHS Compliant
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
1200
V
I_C Continuous Collector Current
T_C = 25°C
230
T_C = 100°C
180
A
I_CM Pulsed Collector Current
T_C = 25°C
300
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_C = 25°C
940
W
RBSOA Reverse Bias Safe Operating Area
T_j = 125°C 300A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
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