APTGF90DH60T3G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Asymmetrical - Bridge NPT IGBT Power Module

APTGF90DH60T3G
Asymmetrical - Bridge
NPT IGBT Power Module
V_CES = 600V
I_C = 90A @ Tc = 80°C
13 14
Q1
CR1
CR3
18
22 7
19
23 8
Q4
CR2
CR4
4
3
29
30
15
31
R1
32
16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• RoHS compliant
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
V_CES Collector - Emitter Breakdown Voltage
I_C Continuous Collector Current
I_CM
V_GE
P_D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Max ratings
Unit
600
V
T_c = 25°C
110
T_c = 80°C
90
A
T_c = 25°C
200
±20
V
T_c = 25°C
416
W
T_j = 150°C 200A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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