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APTGF90DA60CT1G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Boost chopper NPT IGBT SiC Chopper diode | |||
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APTGF90DA60CT1G
Boost chopper
NPT IGBT
SiC Chopper diode
56
11
CR1
3
4
NTC
Q2
CR2
9
10
12
12
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate â Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VCES = 600V
IC = 90A @ Tc = 80°C
Application
⢠AC and DC motor control
⢠Switched Mode Power Supplies
⢠Power Factor Correction
Features
⢠Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Low leakage current
- RBSOA and SCSOA rated
⢠Chopper SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
⢠Very low stray inductance
⢠Internal thermistor for temperature monitoring
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
⢠RoHS Compliant
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Max ratings
Unit
600
V
110
90
A
315
±20
V
416
W
Tj = 150°C 200A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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