APTGF75DH120T3G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Asymmetrical - Bridge NPT IGBT Power Module

APTGF75DH120T3G
Asymmetrical - Bridge
NPT IGBT Power Module
V_CES = 1200V
I_C = 75A @ Tc = 80°C
13 14
Q1
CR1
CR3
18
22 7
19
23 8
Q4
CR2
CR4
4
3
29
30
15
31
R1
32
16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Application
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
1200
V
I_C Continuous Collector Current
T_c = 25°C
100
T_c = 80°C
75
A
I_CM Pulsed Collector Current
T_c = 25°C
150
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_c = 25°C
500
W
RBSOA Reverse Bias Safe Operating Area
T_j = 150°C 150A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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