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APTGF75DA120T1G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Boost chopper NPT IGBT Power Module | |||
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APTGF75DA120T1G
Boost chopper
NPT IGBT Power Module
VCES = 1200V
IC = 75A @ Tc = 80°C
56
11
CR1
3
4
NTC
Q2
CR2
9
10
12
12
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Application
⢠AC and DC motor control
⢠Switched Mode Power Supplies
⢠Power Factor Correction
Features
⢠Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
⢠Very low stray inductance
⢠Internal thermistor for temperature monitoring
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VCES Collector - Emitter Breakdown Voltage
1200
V
IC Continuous Collector Current
Tc = 25°C
100
Tc = 80°C
75
A
ICM Pulsed Collector Current
Tc = 25°C
150
VGE Gate â Emitter Voltage
±20
V
PD Maximum Power Dissipation
Tc = 25°C
500
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C 150A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1â5
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