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APTGF50DH60TG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Asymmetrical - Bridge NPT IGBT Power Module | |||
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APTGF50DH60TG
Asymmetrical - Bridge
NPT IGBT Power Module
VCES = 600V
IC = 50A @ Tc = 80°C
Q1
G1
VBUS
VBUS SENSE
CR3
E1
OUT1 O UT2
Q4
CR2
0/VBUS SENSE
NTC1
0/V BU S
G4
E4
NT C2
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor control
Features
⢠Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
⢠Kelvin emitter for easy drive
⢠Very low stray inductance
- Symmetrical design
- Lead frames for power connections
⢠Internal thermistor for temperature monitoring
⢠High level of integration
VBUS
SENSE
VBUS
E1
G1
G4
E4
0/ VBUS
0/ VBUS
SENSE
OUT2
OUT1
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate â Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Benefits
⢠Outstanding performance at high frequency
operation
⢠Stable temperature behavior
⢠Very rugged
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal
for easy PCB mounting
⢠Easy paralleling due to positive TC of VCEsat
⢠Low profile
⢠RoHS compliant
Max ratings Unit
600
V
TC = 25°C
65
TC = 80°C
50
A
TC = 25°C
230
±20
V
TC = 25°C
250
W
Tj = 125°C 100A@500V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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