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APTGF50DH120TG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Asymmetrical - Bridge NPT IGBT Power Module | |||
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APTGF50DH120TG
Asymmetrical - Bridge
NPT IGBT Power Module
Q1
G1
VBUS
VBUS SENSE
CR3
E1
OUT1 OUT2
Q4
CR2
0/VBUS SENSE
NT C1
0/ V BU S
G4
E4
NT C2
VCES = 1200V
IC = 50A @ Tc = 80°C
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Switched Reluctance Motor Drives
Features
⢠Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
⢠Kelvin emitter for easy drive
⢠Very low stray inductance
- Symmetrical design
- Lead frames for power connections
⢠Internal thermistor for temperature monitoring
⢠High level of integration
VBUS
SENSE
VBUS
E1
G1
G4
E4
0/VBUS
0/VBUS
SENSE
OUT2
OUT1
NTC2
NTC1
Benefits
⢠Outstanding performance at high frequency
operation
⢠Stable temperature behavior
⢠Very rugged
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Easy paralleling due to positive TC of VCEsat
⢠Low profile
⢠RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VCES Collector - Emitter Breakdown Voltage
1200
V
IC Continuous Collector Current
Tc = 25°C
75
Tc = 80°C
50
A
ICM Pulsed Collector Current
Tc = 25°C
150
VGE Gate â Emitter Voltage
±20
V
PD Maximum Power Dissipation
Tc = 25°C
312
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C 100A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1-6
www.microsemi.com
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