APTGF50DA120CT1G Datasheet, PDF (1/7 Pages) Microsemi Corporation – Boost chopper NPT IGBT SiC Chopper diode

APTGF50DA120CT1G
Boost chopper
NPT IGBT
SiC Chopper diode
56
11
CR1
3
4
NTC
Q2
CR2
9
10
12
12
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
V_CES Collector - Emitter Breakdown Voltage
I_C Continuous Collector Current
I_CM
V_GE
P_D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
V_CES = 1200V
I_C = 50A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Low leakage current
- RBSOA and SCSOA rated
• Chopper SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Max ratings
Unit
1200
V
T_c = 25°C
75
T_c = 80°C
50
A
T_c = 25°C
150
±20
V
T_c = 25°C
312
W
T_j = 150°C 100A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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