APTGF360U60D4G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Single switch NPT IGBT Power Module

APTGF360U60D4G
Single switch
NPT IGBT Power Module
V_CES = 600V
I_C = 360A @ Tc = 80°C
Application
1
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
3
• Motor control
Features
5
• Non Punch Through (NPT) IGBT
- Low voltage drop
2
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• M6 connectors for power
• M4 connectors for signal
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive T_C of V_CEsat
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
600
V
I_C Continuous Collector Current
T_C = 25°C
450
T_C = 80°C
360
A
I_CM Pulsed Collector Current
T_C = 25°C
720
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_C = 25°C
1560
W
RBSOA Reverse Bias Safe Operating Area
T_j = 125°C 800A@520V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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