APTGF350DA60G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Boost chopper NPT IGBT Power Module

APTGF350DA60G
Boost chopper
NPT IGBT Power Module
V_CES = 600V
I_C = 350A @ Tc = 80°C
VBUS
CR1
OUT
Q2
G2
E2
0/VBUS
VBUS
E2
G2
0/VBUS
OUT
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Non Punch Through (NPT) Fast IGBT^®
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive T_C of V_CEsat
• Low profile
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
600
V
I_C Continuous Collector Current
T_c = 25°C
430
T_c = 80°C
350
A
I_CM Pulsed Collector Current
T_c = 25°C
1225
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_c = 25°C
1562
W
RBSOA Reverse Bias Safe Operating Area
T_j = 150°C 800A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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