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APTGF330A60D3G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Phase leg NPT IGBT Power Module | |||
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APTGF330A60D3G
Phase leg
NPT IGBT Power Module
VCES = 600V
IC = 330A @ Tc = 80°C
3
Q1
4
5
1
Q2
6
7
2
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor control
Features
⢠Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
⢠Kelvin emitter for easy drive
⢠High level of integration
⢠M6 power connectors
Benefits
⢠Stable temperature behavior
⢠Very rugged
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Easy paralleling due to positive TC of VCEsat
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VCES Collector - Emitter Breakdown Voltage
600
V
IC Continuous Collector Current
TC = 25°C
520
TC = 80°C
330
A
ICM Pulsed Collector Current
TC = 25°C
800
VGE Gate â Emitter Voltage
±20
V
PD Maximum Power Dissipation
TC = 25°C
1560
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 800A @ 520V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
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